Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

NDD60N360U1-1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NDD60N360U1-1G
Description  N-Channel Power MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NDD60N360U1-1G Datasheet(HTML) 2 Page - ON Semiconductor

  NDD60N360U1-1G Datasheet HTML 1Page - ON Semiconductor NDD60N360U1-1G Datasheet HTML 2Page - ON Semiconductor NDD60N360U1-1G Datasheet HTML 3Page - ON Semiconductor NDD60N360U1-1G Datasheet HTML 4Page - ON Semiconductor NDD60N360U1-1G Datasheet HTML 5Page - ON Semiconductor NDD60N360U1-1G Datasheet HTML 6Page - ON Semiconductor NDD60N360U1-1G Datasheet HTML 7Page - ON Semiconductor NDD60N360U1-1G Datasheet HTML 8Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
NDD60N360U1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS =0V, ID =1mA
600
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Reference to 25°C, ID = 1 mA
560
mV/°C
Drain−to−Source Leakage Current
IDSS
VDS = 600 V, VGS =0V
TJ =25°C
1
mA
TJ = 125°C
100
Gate−to−Source Leakage Current
IGSS
VGS = ±25 V
±100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID = 250 mA
2
3.2
4
V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Reference to 25°C, ID = 250 mA
8.6
mV/°C
Static Drain-to-Source On Resistance
RDS(on)
VGS =10V, ID = 5.5 A
320
360
mW
Forward Transconductance
gFS
VDS =15V, ID = 5.5 A
10
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
VDS =50V, VGS = 0 V, f = 1 MHz
790
pF
Output Capacitance
Coss
47
Reverse Transfer Capacitance
Crss
3.0
Effective output capacitance, energy
related (Note 6)
Co(er)
VGS = 0 V, VDS = 0 to 480 V
38.9
Effective output capacitance, time
related (Note 7)
Co(tr)
ID = constant, VGS = 0 V,
VDS = 0 to 480 V
135
Total Gate Charge
Qg
VDS = 300 V, ID = 13 A, VGS =10V
26
nC
Gate-to-Source Charge
Qgs
4.7
Gate-to-Drain Charge
Qgd
12.9
Plateau Voltage
VGP
5.6
V
Gate Resistance
Rg
4.5
W
RESISTIVE SWITCHING CHARACTERISTICS (Note 5)
Turn-on Delay Time
td(on)
VDD = 300 V, ID =13A,
VGS =10V, RG = 0 W
10
ns
Rise Time
tr
20
Turn-off Delay Time
td(off)
26
Fall Time
tf
22
SOURCE−DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
IS = 13 A, VGS =0V
TJ =25°C
0.93
1.6
V
TJ = 100°C
0.86
Reverse Recovery Time
trr
VGS =0V, VDD =30V
IS = 13 A, di/dt = 100 A/ms
303
ns
Charge Time
ta
206
Discharge Time
tb
97
Reverse Recovery Charge
Qrr
3.6
mC
4. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
6. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
7. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.


Similar Part No. - NDD60N360U1-1G

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
NDD60N360U1-1G ONSEMI-NDD60N360U1-1G Datasheet
151Kb / 9P
   N-Channel Power MOSFET
May, 2013 ??Rev. 0
More results

Similar Description - NDD60N360U1-1G

ManufacturerPart #DatasheetDescription
logo
AiT Semiconductor Inc.
BSS123L AITSEMI-BSS123L Datasheet
486Kb / 5P
   MOSFET N-CHANNEL POWER MOSFET
REV1.0
logo
Fairchild Semiconductor
SSF7N90A FAIRCHILD-SSF7N90A Datasheet
249Kb / 8P
   N-CHANNEL POWER MOSFET
FQH90N15 FAIRCHILD-FQH90N15_06 Datasheet
1Mb / 10P
   N-Channel Power MOSFET
SSH8N80A FAIRCHILD-SSH8N80A Datasheet
249Kb / 8P
   N-CHANNEL POWER MOSFET
logo
Seme LAB
IRF450 SEME-LAB-IRF450 Datasheet
19Kb / 2P
   N-CHANNEL POWER MOSFET
IRFM450 SEME-LAB-IRFM450 Datasheet
15Kb / 2P
   N-CHANNEL POWER MOSFET
IRFN240SMD SEME-LAB-IRFN240SMD Datasheet
23Kb / 2P
   N-CHANNEL POWER MOSFET
IRF044 SEME-LAB-IRF044 Datasheet
21Kb / 2P
   N-CHANNEL POWER MOSFET
IRF140 SEME-LAB-IRF140 Datasheet
22Kb / 2P
   N-CHANNEL POWER MOSFET
2N7081220MISO SEME-LAB-2N7081220MISO Datasheet
14Kb / 2P
   N-CHANNEL POWER MOSFET
logo
Fairchild Semiconductor
SSH10N90A FAIRCHILD-SSH10N90A Datasheet
250Kb / 8P
   N-CHANNEL POWER MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com