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NDD60N360U1-1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NDD60N360U1-1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NDD60N360U1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS =0V, ID =1mA 600 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 1 mA 560 mV/°C Drain−to−Source Leakage Current IDSS VDS = 600 V, VGS =0V TJ =25°C 1 mA TJ = 125°C 100 Gate−to−Source Leakage Current IGSS VGS = ±25 V ±100 nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(TH) VDS =VGS, ID = 250 mA 2 3.2 4 V Negative Threshold Temperature Coefficient VGS(TH)/TJ Reference to 25°C, ID = 250 mA 8.6 mV/°C Static Drain-to-Source On Resistance RDS(on) VGS =10V, ID = 5.5 A 320 360 mW Forward Transconductance gFS VDS =15V, ID = 5.5 A 10 S DYNAMIC CHARACTERISTICS Input Capacitance Ciss VDS =50V, VGS = 0 V, f = 1 MHz 790 pF Output Capacitance Coss 47 Reverse Transfer Capacitance Crss 3.0 Effective output capacitance, energy related (Note 6) Co(er) VGS = 0 V, VDS = 0 to 480 V 38.9 Effective output capacitance, time related (Note 7) Co(tr) ID = constant, VGS = 0 V, VDS = 0 to 480 V 135 Total Gate Charge Qg VDS = 300 V, ID = 13 A, VGS =10V 26 nC Gate-to-Source Charge Qgs 4.7 Gate-to-Drain Charge Qgd 12.9 Plateau Voltage VGP 5.6 V Gate Resistance Rg 4.5 W RESISTIVE SWITCHING CHARACTERISTICS (Note 5) Turn-on Delay Time td(on) VDD = 300 V, ID =13A, VGS =10V, RG = 0 W 10 ns Rise Time tr 20 Turn-off Delay Time td(off) 26 Fall Time tf 22 SOURCE−DRAIN DIODE CHARACTERISTICS Diode Forward Voltage VSD IS = 13 A, VGS =0V TJ =25°C 0.93 1.6 V TJ = 100°C 0.86 Reverse Recovery Time trr VGS =0V, VDD =30V IS = 13 A, di/dt = 100 A/ms 303 ns Charge Time ta 206 Discharge Time tb 97 Reverse Recovery Charge Qrr 3.6 mC 4. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. 6. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 7. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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