MTY16N80E datasheet(3/7 Pages) ONSEMI

Part #	MTY16N80E

Description	Power Field Effect Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MTY16N80E

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TYPICAL ELECTRICAL CHARACTERISTICS

100000

10000

1000

100

10

1

0

100

200

300

400

500

600

700

8

100

°C

25

°C

2.5

2.0

1.5

1.0

0.5

0

−50

−25

0

25

50

75

100

125

150

VGS = 10 V

ID = 8 A

0.6

0.5

0.4

3

4

8

12

16

24

20

ID, DRAIN CURRENT (AMPS)

15 V

0.9

0.6

0

08

16

25

°C

0.3

24

32

24

16

8

0

2

4

6

8

10

12

14

16

18

20

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

and Temperature

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−To−Source Leakage

Current versus Voltage

16

12

8

4

0

23

4

5

TJ = 25°C

VGS = 10 V

VDS ≥ 10 V

VGS = 10 V

TJ = 100°C

−55

°C

TJ = 25°C

VGS = 10 V

VGS = 0 V

TJ = 125°C

6 V

5 V

8 V

100

°C

25

°C

TJ = −55°C

32

28

4 V

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