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MTB6N60E1 Datasheet(PDF) 6 Page - ON Semiconductor

Part # MTB6N60E1
Description  High Energy PowerFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MTB6N60E1 Datasheet(HTML) 6 Page - ON Semiconductor

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MTB6N60E1
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6
shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
SAFE OPERATING AREA
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
1
TA, AMBIENT TEMPERATURE (°C)
Figure 15. D2PAK Power Derating Curve
RθJA = 50°C/W
Board material = 0.065 mil FR−4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Thermal Response
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
1
t, TIME (SECONDS)
D = 0.5
0.2
0.1
0.05
0.02
0.01
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
100
10
1.0
0.1
0.1
1
10
100
1000
100 μs
10 μs
1 ms
10 ms
dc
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE PULSE
TC = 25°C
TJ, STARTING JUNCTION TEMPERATURE (°C)
0
25
50
75
100
125
450
ID = 6 A
1
400
150
100
50
200
250
300
350


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