CYStech Electronics Corp.

Spec. No. : C386X8

Issued Date : 2015.04.14

Revised Date :

Page No. : 2/9

MTP8107X8

CYStek Product Specification

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

-30

Gate-Source Voltage

+20/-25

V

-6.6

-5.3

Pulsed Drain Current

(Note 1&2)

-30

A

(Note 3)

2.5

(Note 3)

1.6

W

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Thermal Performance

Parameter

Symbol

Limit

Unit

Thermal Resistance, Junction-to-Ambient

(Note 3)

50

Thermal Resistance, Junction-to-Case

20

°C/W

Note : 1. Pulse width limited by maximum junction temperature.

2. Pulse width≤300μs, duty cycle≤2%

3. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s; 125

°C/W when mounted on minimum copper pad.

Electrical Characteristics (Tj=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

-30

-

-

-21

-

-

-1

-

-2.5

V

-

-

±100

nA

-

-

-10

-

-

-100

µA

-

19.5

28

-

30

38

m

Ω

-

7

-

S

Dynamic

Ciss

-

1109

-

Coss

-

158

-

Crss

-

112

-

pF

-

7

-

-

19.8

-

-

60.2

-

-

18.8

-

ns