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MTN5N50BI3 Datasheet(PDF) 5 Page - Cystech Electonics Corp. |
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MTN5N50BI3 Datasheet(HTML) 5 Page - Cystech Electonics Corp. |
5 / 10 page CYStech Electronics Corp. Spec. No. : C142I3 Issued Date : 2015.09.21 Revised Date : Page No. : 5/10 MTN5N50BI3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Reverse Voltage 10 100 1000 10000 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Ciss Coss Crss f=1MHz Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 ID, Drain Current(A) Ta=25°C Pulsed VDS=15V Gate Charge Characteristics 0 2 4 6 8 10 04 8 12 16 2 Qg, Total Gate Charge(nC) 0 ID=4.5A VDS=100V VDS=250V VDS=400V Maximum Safe Operating Area 0.01 0.1 1 10 100 1 10 100 1000 VDS, Drain-Source Voltage(V) RDS(ON) Limited DC 100μs 10 μs TC=25°C, Tj(max)=150°C VGS=10V, RθJC=2.6°C/W Single pulse 100ms 10ms 1ms 1s Maximum Drain Current vs Case Temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 175 TC, Case Temperature(°C) VGS=10V, RθJC=2.6°C/W |
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