CYStech Electronics Corp.

Spec. No. : C835DFA6

Issued Date : 2015.11.02

Revised Date :

Page No. : 2/13

MTC3586BDFA6

CYStek Product Specification

Limits

Parameter

Symbol

N-channel

P-channel

Unit

Drain-Source Breakdown Voltage

20

-20

Gate-Source Voltage

±

12

±

12

V

5

-3.3

4

-2.6

20

-20

A

Pd

1.38

W

Linear Derating Factor

0.01

W /

°C

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec

2.

Pulse width limited by maximum junction temperature

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

20

-

-

V

-

0.02

-

V/

°C

Reference to 25

0.5

0.7

1.2

V

-

-

±100

nA

-

-

1

-

-

10

μA

°C

-

27

40

-

37

50

-

82

105

m

Ω

-

7

-

S

Dynamic

Ciss

-

423

-

Coss

-

50

-

Crss

-

48

-

pF

-

6

-

-

8

-

-

11

-

-

10

-

ns

*Qg

-

6

-

*Qgs

-

0.8

-

*Qgd

-

2.5

-

nC

Source-Drain Diode

-

0.77

1.2

V

*trr

-

16

-

ns

*Qrr

-

8

-

nC

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%