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MTA050P02DFJ6 Datasheet(PDF) 4 Page - Cystech Electonics Corp.

Part # MTA050P02DFJ6
Description  -20V P-Channel Enhancement Mode MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTA050P02DFJ6 Datasheet(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C394DFJ6
Issued Date : 2015.09.03
Revised Date :
Page No. : 4/9
MTA050P02DFJ6
CYStek Product Specification
Typical Characteristics
Typical Output Characteristics
0
4
8
12
16
20
0
1
23
45
6
78
9
10
-VDS, Drain-Source Voltage(V)
2V
-VGS=1.5V
2.5V
5V, 4V, 3V
Brekdown Voltage vs Ambient Temperature
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250
μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
0
10
20
30
40
50
60
70
80
90
100
0.1
1
10
100
-ID, Drain Current(A)
-VGS=2.5V
-VGS=4.5V
-VGS=10V
-VGS=1.8V
Reverse Drain Current vs Source-Drain Voltage
0
0.2
0.4
0.6
0.8
1
012
34567
89
10
-IDR, Reverse Drain Current (A)
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
20
40
60
80
100
120
140
160
180
200
02
4
6
8
10
-VGS, Gate-Source Voltage(V)
-ID=3A
Drain-Source On-State Resistance vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=-4.5, ID=-3A
RDS(ON)@Tj=25°C : 33.4mΩ typ.


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