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NCE4060K Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE4060K Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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2 / 7 page  Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 2 NCE4060K Pb Free Product http://www.ncepower.com Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJC 2.3 /W ℃ Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 40 45 - V Zero Gate Voltage Drain Current IDSS VDS=40V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 1.6 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A - 7.3 13 mΩ Forward Transconductance gFS VDS=10V,ID=20A 15 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 1800 - PF Output Capacitance Coss - 280 - PF Reverse Transfer Capacitance Crss VDS=20V,VGS=0V, F=1.0MHz - 190 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 6.4 - nS Turn-on Rise Time tr - 17.2 - nS Turn-Off Delay Time td(off) - 29.6 - nS Turn-Off Fall Time tf VDD=20V,ID=2A,RL=1Ω VGS=10V,RG=3Ω - 16.8 - nS Total Gate Charge Qg - 29 nC Gate-Source Charge Qgs - 4.5 nC Gate-Drain Charge Qgd VDS=20V,ID=20A, VGS=10V - 6.4 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=10A - 1.2 V Diode Forward Current (Note 2) IS - - 60 A Reverse Recovery Time trr - 29 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 20A di/dt = 100A/μs (Note3) - 26 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25℃,VDD=20V,VG=10V,L=1mH,Rg=25Ω， |
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