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2N5195 Datasheet(PDF) 1 Page - ON Semiconductor |
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2N5195 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 8 page Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *MAXIMUM RATINGS Rating Symbol 2N5194 2N5195 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCB 60 80 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25 _C PD 40 320 Watts mW/ _C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 _C/W THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case θJC 3.12 _C/W *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) 2N5194 2N5195 VCEO(sus) 60 80 — — Vdc Collector Cutoff Current (VCE = 60 Vdc, IB = 0) 2N5194 (VCE = 80 Vdc, IB = 0) 2N5195 ICEO — — 1.0 1.0 mAdc Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N5194 (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N5195 (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N5194 (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N5195 ICEX — — — — 0.1 0.1 2.0 2.0 mAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) 2N5194 (VCB = 80 Vdc, IE = 0) 2N5195 ICBO — — 0.1 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 1.0 mAdc *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. ON Semiconductor) © Semiconductor Components Industries, LLC, 2002 April, 2002 – Rev. 10 1 Publication Order Number: 2N5194/D 2N5194 2N5195 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP 60–80 VOLTS * CASE 77–09 TO–225AA TYPE 3 2 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE |
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