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2N5194 Datasheet(PDF) 5 Page - ON Semiconductor |
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2N5194 Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 8 page 2N5194 2N5195 http://onsemi.com 5 DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA tP PP PP t1 1/f DUTY CYCLE, D = t1 f = t1 tP PEAK PULSE POWER = PP Figure 13. A train of periodical power pulses can be represented by the model shown in Figure 13. Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. To find θJC(t), multiply the value obtained from Figure 12 by the steady state value θJC. Example: The 2N5193 is dissipating 50 watts under the following conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2). Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, the reading of r(t1, D) is 0.27. The peak rise in junction temperature is therefore: ∆T = r(t) x PP x θJC = 0.27 x 50 x 3.12 = 42.2_C |
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