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CEP08N8 Datasheet(PDF) 3 Page - Chino-Excel Technology |
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CEP08N8 Datasheet(HTML) 3 Page - Chino-Excel Technology |
3 / 4 page 3 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VDS=VGS ID=250µA -50 -25 0 25 50 75 100 125 150 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current Crss 2100 1750 1400 1050 700 350 0 0 5 10 15 20 25 Ciss Coss 12 8 4 0 0 2 4 6 16 8 10 TJ=125 C -55 C 25 C 0.4 0.6 0.8 1.0 10 0 10 -1 10 1 1.2 1.6 1.4 VGS=0V CEP08N8/CEB08N8 CEF08N8 3.0 0.0 2.5 2.0 1.5 1.0 0.5 VGS=10V ID=4A -100 -50 0 50 100 150 200 10 8 6 4 2 0 0 3 6 12 9 15 18 VGS=5V VGS=10,9,8,7V |
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