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K9F6408Q0C Datasheet(PDF) 9 Page - Samsung semiconductor

Part # K9F6408Q0C
Description  8M x 8 Bit Bit NAND Flash Memory
Download  29 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9F6408Q0C Datasheet(HTML) 9 Page - Samsung semiconductor

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FLASH MEMORY
9
K9F6408U0C
K9F6408Q0C
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins and -0.2V on Vcc and
VccQ pins. During transitions, this level may undershoot to -2.0V for periods
<20ns. Maximum DC voltage on input/output pins is VCCQ+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9F6408Q0C(1.8V)
K9F6408U0C(3.3V)
Voltage on any pin relative to VSS
VIN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
VCC
-0.2 to + 2.45
-0.6 to + 4.6
V
VccQ
-0.2 to + 2.45
-0.6 to + 4.6
V
Temperature
Under Bias
K9F6408X0C-XCB0
TBIAS
-10 to + 125
°C
K9F6408X0C-XIB0
-40 to + 125
Storage Temperature
TSTG
-65 to + 150
°C
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F6408X0C-XCB0:TA=0 to 70
°C, K9F6408X0C-XIB0:TA=-40 to 85°C)
Parameter
Symbol
K9F6408Q0C(1.8V)
K9F6408U0C(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
VCC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
VccQ
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
0
0
0
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
Parameter
Symbol
Test Conditions
K9F6408Q0C(1.8V)
K9F6408U0C(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Sequential Read
ICC1
CE=VIL, IOUT=0mA
tRC=50ns
-
5
10
-
10
20
mA
Program
ICC2
-
-
8
15
-
10
20
Erase
ICC3
-
-
8
15
-
10
20
Stand-by Current(TTL)
ISB1
CE=VIH, WP=0V/VCC
-
-
1
-
-
1
Stand-by Current(CMOS)
ISB2
CE=VCC-0.2, WP=0V/VCC
-
10
50
-
10
50
µA
Input Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
±10
-
-
±10
Output Leakage Current
ILO
VOUT=0 to Vcc(max)
-
-
±10
-
-
±10
Input High Voltage
VIH*
I/O pins
VccQ-0.4
VccQ
+0.3
2.0
-
VccQ+0.3
V
Except I/O pins
VCC-0.4
-
VCC
+0.3
2.0
-
VCC+0.3
Input Low Voltage, All inputs
VIL*
-
-0.3
-
0.4
-0.3
-
0.8
Output High Voltage Level
VOH
K9F6408Q0C :IOH=-100
µA
K9F6408U0C :IOH=-400
µA
VccQ-0.1
-
-
2.4
-
-
Output Low Voltage Level
VOL
K9F6408Q0C :IOL=100uA
K9F6408U0C :IOL=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
IOL(R/B)
K9F6408Q0C :VOL=0.1V
K9F6408U0C :VOL=0.4V
3
4
-
8
10
-
mA


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