CEM2281 datasheet(3/4 Pages) CET

Part #	CEM2281

Description	P-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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3 / 4 page

CEM2281

3

-VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

-VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

-VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

2.2

1.9

1.6

1.3

1.0

0.7

0.4

V

GS=-4.5V

I

D=-6.5A

-100

-50

0

50

100

150

200

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V

DS=VGS

I

D=-250µA

-50

-25

0

25

50

75

100

125

150

-VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

25

20

15

10

5

0

0.0

0.5

2.0

3.0

-V

GS=2V

2.5

1.5

1.0

-V

GS=3V

-V

GS=4.5,4V

15

12

9

6

3

0

0.0

0.6

1.2

1.8

0.3

0.9

1.5

T

J=125 C

-55 C

25 C

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

0.4

0.6

0.8

1.0

10

0

10

-1

10

1

1.4

1.2

V

GS=0V

Ciss

Crss

3600

3000

2400

1800

1200

600

0

5

10

15

20

25

30

Coss

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