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ECH8655R Datasheet(PDF) 1 Page - ON Semiconductor |
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ECH8655R Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page http://onsemi.com Semiconductor Components Industries, LLC, 2013 July, 2013 ECH8655R N-Channel Power MOSFET 24V, 9A, 17mΩ, Dual ECH8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Features • Low ON-resistance • Built-in gate protection resistor • 2.5V drive • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 24 V Gate-to-Source Voltage VGSS ±12 V Drain Current (DC) ID 9A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 60 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.4 W Total Dissipation PT When mounted on ceramic substrate (900mm2×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Package Dimensions unit : mm (typ) 7011A-003 Product & Package Information • Package : ECH8 • JEITA, JEDEC : - • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection Ordering number : ENA1011A 876 5 123 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain ECH8 1 4 85 0.15 0 to 0.02 0.65 2.9 0.3 Top View Bottom View TL ECH8655R-TL-H TA Lot No. 51612 TKIM/40908PE TIIM TC-00001311 No. A1011-1/7 |
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