ATP207-TL-H datasheet(2/7 Pages) ONSEMI

Part #	ATP207-TL-H

Description	N-Channel Power MOSFET

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ATP207

No. A1319-2/7

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

40

V

Zero-Gate Voltage Drain Current

IDSS

VDS=40V, VGS=0V

1

μA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

1.5

2.6

V

Forward Transfer Admittance

| yfs |

VDS=10V, ID=33A

12

20

S

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=33A, VGS=10V

7

9.1

mΩ

RDS(on)2

ID=17A, VGS=4.5V

11

15.5

mΩ

Input Capacitance

Ciss

VDS=20V, f=1MHz

2710

pF

Output Capacitance

Coss

330

pF

Reverse Transfer Capacitance

Crss

220

pF

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

27

ns

Rise Time

tr

290

ns

Turn-OFF Delay Time

td(off)

170

ns

Fall Time

tf

110

ns

Total Gate Charge

Qg

VDS=20V, VGS=10V, ID=65A

54

nC

Gate-to-Source Charge

Qgs

14

nC

Gate-to-Drain “Miller” Charge

Qgd

11

nC

Diode Forward Voltage

VSD

IS=65A, VGS=0V

1.0

1.2

V

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

ATP207-TL-H

ATPAK

3,000pcs./reel

Pb Free and Halogen Free

PW=10μs

D.C.≤1%

P.G

50Ω

G

S

D

ID=33A

RL=0.61Ω

VDD=20V

VOUT

ATP207

VIN

10V

0V

VIN

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ATP207-TL-H Datasheet(PDF) 2 Page - ON Semiconductor

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