61213 TKIM TC-00002936/62712 TKIM/33006PE MSIM TB-00002198/21400 TS(KOTO) TA-1987 No.6260-1/6

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

June, 2013

3LN01C

N-Channel Small Signal MOSFET

Features

•

Low ON-resistance

•

Ultrahigh-speed switching

•

2.5V drive

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain to Source Voltage

VDSS

30

V

Gate to Source Voltage

VGSS

±10

V

Drain Current (DC)

ID

0.15

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

0.6

A

Allowable Power Dissipation

PD

0.25

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

This product is designed to “ESD immunity < 200V

*”, so please take care when handling.

* Machine Model

Package Dimensions

unit : mm (typ)

7013A-013

Ordering number : EN6260C

Ordering & Package Information

Device

Package

Shipping

memo

3LN01C-TB-E

CP

SC-59, TO-236,

SOT-23, TO-236AB

3,000

pcs./reel

Pb-Free

3LN01C-TB-H

CP

SC-59, TO-236,

SOT-23, TO-236AB

3,000

pcs./reel

Pb-Free

and

Halogen Free

Packing Type: TB

Marking

Electrical Connection

1 : Gate

2 : Source

3 : Drain

CP

12

3

2.9

0.95

0.4

0.1

3LN01C-TB-E

3LN01C-TB-H

TB

YA

1

2

3

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.