NXP Semiconductors

BYV34-500

Dual ultrafast power diodes

BYV34-500

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Product data sheet

4 June 2014

4 / 10

8. Thermal characteristics

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

with heatsink compound; per diode;

Fig. 3

-

-

2.4

K/W

thermal resistance

from junction to

mounting base

with heatsink compound; both diodes

conducting

-

-

1.6

K/W

thermal resistance

from junction to

ambient

in free air

-

60

-

K/W

001aag912

1

10

(K/W)

1

10

T

P

t

T

δ =

Fig. 3. Transient thermal impedance from junction to mounting base per diode as a function of pulse width