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NCP1256BSN100T1G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP1256BSN100T1G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 24 page NCP1256 www.onsemi.com 4 S R Q Q 65/100 kHz clock Jitter mod. Vcc Drv Vcc and logic management Vdd power on reset LEB1 vdd / 3 4 ms SS Power on reset GND CS FB 1−us time constant Frequency foldback Vlatch1 Vfold S R Q Q Clamp Up counter 4 double hiccup RST Event gone? peak current freeze VFB < 0.75 V ? setpoint = 250 mV UVLO BO VBO1 VBO2 BO VOVP 20 us Ip flag = 1 if over current −−> start timer −−> auto rec. invert vdd OPPGM IOPPLL Vlatch2 RFB Validated during off time (option) ICSO Pre−short Latched OCP (option) UVLO? checked at PON only latched OCP opt. Iopp3 VFB < VfoldF Iopp3 = 0 VFB > VoppF Iopp3 = I1 I2=0 I1=I2 VFB RdBO DZBO I1 I2 BO reset = 1 if timer completed OCP timer completed Auto−recovery dble hiccup OVP on BO OVP on CS Logic mngt 1−us time constant Figure 4. Internal Block Diagram Auto−recovery for E version no clamp for E version Table 3. MAXIMUM RATINGS TABLE Symbol Rating Value Unit Vcc Power Supply voltage, Vcc pin, continuous voltage −0.3 to 28 V Maximum voltage on low power pins CS, FB and BO −0.3 to 10 V VDRV Maximum voltage on DRV pin −0.3 to Vcc+0.3 V RθJ−A Thermal Resistance Junction−to−Air 360 °C/W TJ,max Maximum Junction Temperature 150 °C Storage Temperature Range −60 to +150 °C HBM Human Body Model ESD Capability per JEDEC JESD22−A114F 4 kV MM Machine Model ESD Capability per JEDEC JESD22−A115C 200 V CDM Charged−Device Model ESD Capability per JEDEC JESD22−C101E 750 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. |
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