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NCP1256BSN65T1G Datasheet(PDF) 5 Page - ON Semiconductor |
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NCP1256BSN65T1G Datasheet(HTML) 5 Page - ON Semiconductor |
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5 / 24 page  NCP1256 www.onsemi.com 5 Table 4. ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, Max TJ = 150°C, Vcc = 12 V unless otherwise noted) Symbol Rating Pin Min Typ Max Unit SUPPLY SECTION VCCON VCC increasing level at which driving pulses are authorized 5 16 18 20 V VCC(min) VCC decreasing level at which driving pulses are stopped 5 8.3 8.9 9.5 V VCCHYST Hysteresis VccON−Vcc(min) 5 8 − − V VCCreset Latched state reset voltage 5 VCC(min)−2 50 mV V ICC1 Start−up current 5 10 mA ICC2 Internal IC consumption with VFB = 3.2 V and CL = 0 FSW = 65 kHz FSW = 100 kHz 5 − − 1.30 1.35 − − mA ICC3 Internal IC consumption with VFB = 3.2 V and CL = 1 nF FSW = 65 kHz FSW = 100 kHz 5 − − 1.8 2.5 − − mA Idis Natural part consumption in hiccup mode – non switching 5 350 mA ICCstby Static consumption between two skip cycles 5 420 mA ICCnoload Internal IC consumption while in skip mode (Vcc = 14 V, driving a typi- cal 7−A/600−V MOSFET, includes opto current) (Note 1) 5 440 mA DRIVE SECTION Tr Output voltage rise−time @ CL = 1 nF, 10−90% of output signal 6 − 40 − ns Tf Output voltage fall−time @ CL = 1 nF, 10−90% of output signal 6 − 30 − ns ROH Source resistance 6 − 13 − W ROL Sink resistance 6 − 6 − W Isource Peak source current, VGS = 0 V (Note 2) 6 500 mA Isink Peak sink current, VGS = 12 V (Note 2) 6 500 mA VDRVlow DRV pin level at VCC close to VCC(min) with a 33−kW resistor to GND 6 8 − − V VDRVhigh DRV pin level at VCC= VOVP−0.2 V – DRV unloaded 6 10 12 14 V CURRENT COMPARATOR VLimit Maximum internal current setpoint – no OPP 4 0.744 0.8 0.856 V VfoldI Default internal voltage set point for frequency foldback trip point ≈ 63% of Vlimit 4 500 mV VfreezeI Internal peak current setpoint freeze ( ≈31% of Vlimit) 4 250 mV TDEL Propagation delay from current detection to gate off−state 4 40 60 ns TLEB1 Leading Edge Blanking Duration – first OCP path 4 300 ns TSS Internal soft−start duration activated upon startup, auto−recovery − 4 ms ICSO Internal pull−up source for pin opening safety test 4 1 mA IOPP1 Voltage on VFB < VfoldF, percentage of applied OPP current 4 0 % IOPP2 Voltage on VFB > VfoldF + 0.7 V, percentage of applied OPP current 4 100 % IOPP3 Voltage on pin 3 = 2.65 V (265 V rms in) AND VFB > VfoldF 4 170 185 210 mA IOPP3clp Voltage on pin 3 > 2.65 V – clamped OPP current 4 185 mA IOPPLL OPP current delivered from CS pin for Vpin3 = VBOon 4 6 mA OPPgm Internal OTA for OPP current generation from BO 4 105 115 125 mS 1. For information only, collected on a typical 45−W adapter. 2. Guaranteed by design 3. Not tested in production. |
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