SSFM2506L

25V N-Channel MOSFET

www.goodark.com

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Rev.1.0

Main Product Characteristics:

25V

6mohm

60A

Features and Benefits:



Advanced trench MOSFET process technology



Special designed for PWM, load switching and general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



175℃ operating temperature



Lead free product

Description:

It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve

extremely low on resistance, fast switching speed and short reverse recovery time. These features

combine to make this design an extremely efficient and reliable device for use in PWM, load switching

and a wide variety of other applications

Absolute Max Rating:

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V①

60

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V①

50

IDM

130

ISM

130

A

PD @TC = 25°C

50

W

PD @TC =100°C

25

W

VDS

Drain-Source Voltage

25

V

VGS

Gate-to-Source Voltage

± 20

V

EAS

90

mJ

IAR

42

A

TJ

TSTG

Operating Junction and

Storage Temperature

Range

-55 to + 175

°C

Thermal Resistance

Symbol

Characterizes

Value

Unit

2.8

℃/W

15

℃/W

41

℃/W

T O -252 D PAK

M arking and pin

ass ignm ent

SS F M 250 8

T O -252 D PAK

M arking and pin

ass ignm ent

SS F M 250 8

S S F M 2506

T O -252 D PAK

M arking and pin

ass ignm ent

SS F M 250 8

T O -252 D PAK

M arking and pin

ass ignm ent

SS F M 250 8

S S F M 2506

SSFM2506L

T O -252 D PAK

M arking and pin

ass ignm ent

SS F M 250 8

T O -252 D PAK

M arking and pin

ass ignm ent

SS F M 250 8

S S F M 2506

T O -252 D PAK

M arking and pin

ass ignm ent

SS F M 250 8

T O -252 D PAK

M arking and pin

ass ignm ent

SS F M 250 8

S S F M 2506

SSFM2506L