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SSFT3906 Datasheet(PDF) 2 Page - GOOD-ARK Electronics |
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SSFT3906 Datasheet(HTML) 2 Page - GOOD-ARK Electronics |
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2 / 6 page  SSFT3906 30V N-Channel MOSFET www.goodark.com Page 2 of 6 Rev.2.0 Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case③ — 1.65 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 30 — — V VGS = 0V, ID = 250μA — 3.2 6 VGS=10V,ID = 30A — 4.3 — TJ = 125℃ — 4.8 8.5 VGS=4.5V,ID = 20A RDS(on) Static Drain-to-Source on-resistance — 6.2 — mΩ TJ = 125℃ 1 1.73 3 VDS = VGS, ID = 250μA VGS(th) Gate threshold voltage — 1.52 — V TJ = 125℃ — — 1 VDS = 30V,VGS = 0V IDSS Drain-to-Source leakage current — — 50 μA TJ = 125°C — — 100 VGS =20V IGSS Gate-to-Source forward leakage -100 — — nA VGS = -20V Qg Total gate charge — 35.25 — Qgs Gate-to-Source charge — 11.04 — Qgd Gate-to-Drain("Miller") charge — 15.94 — nC ID = 32A, VDS=15V, VGS =4.5V td(on) Turn-on delay time — 14.6 — tr Rise time — 48.9 — td(off) Turn-Off delay time — 30.6 — tf Fall time — 10.3 — ns VGS=4.5V, VDS=15V, RGEN=2Ω，ID = 32A, Ciss Input capacitance — 4315 — Coss Output capacitance — 439 — Crss Reverse transfer capacitance — 403 — pF VGS = 0V VDS = 15V ƒ = 800kHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 90 A ISM Pulsed Source Current (Body Diode) — — 180 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.71 1.3 V IS=1A, VGS=0V trr Reverse Recovery Time — 15.8 — ns Qrr Reverse Recovery Charge — 8.0 — nC TJ = 25°C, IF =30A, di/dt = 150A/μs |
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