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ACE7433M Datasheet(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE7433M Datasheet(HTML) 3 Page - ACE Technology Co., LTD. |
3 / 7 page ACE7433M P-Channel 30-V MOSFET VER 1.1 3 Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Gate Source Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -1 V Gate Body Leakage IGSS VDS=0V, VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V -1 uA VDS=-24V, VGS=0V, TJ=55℃ -25 On-State Drain-Current a ID(on) VDS=-5V, VGS=-10V -30 A Static Drain-Source On-Resistance a rDS(ON) VGS=-10V,ID=-15.3A 9 m Ω VGS=-4.5V,ID=-12.3A 13 Forward Transconductance a gfS VGS=-15V,ID=-15.3A 34 S Diode Forward Voltage a VSD IS=-3.7A ,VGS=0V -0.72 V Dynamic b Total Gate Charge Qg VDS=-15V,VGS=-4.5V , ID=-15.3A 140 nC Gate-Source Charge Qgs 35 Gate-Drain Charge Qgd 62 Turn-On Delay Time td(on) VDS=-15V, ,RL=0.9 Ω ID=-15.3A,VGS=-10V RGEN=6 Ω, 18 ns Rise Time tf 87 Turn-Off Delay Time td(off) 345 Fall Time tf 226 Input Capacitance Ciss VDS=-15V, VGS=0V f=1MHz 8500 pF Output Capacitance Coss 1291 Reverse Transfer Capacitance Crss 939 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing . |
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