74LVC125ADR2G datasheet(3/9 Pages) ONSEMI

Part #	74LVC125ADR2G

Description	Low-Voltage CMOS Quad 2-Input XOR Gate

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74LVC125A

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MAXIMUM RATINGS

Symbol

Parameter

Value

Condition

Unit

VCC

DC Supply Voltage

−0.5 to +6.5

V

VI

DC Input Voltage

−0.5

≤ VI ≤ +6.5

V

VO

DC Output Voltage

−0.5

≤ VO ≤ +6.5

Output in 3−State

V

−0.5

≤ VO ≤ VCC + 0.5

Output in HIGH or LOW State

(Note 1)

V

IIK

DC Input Diode Current

−50

VI < GND

mA

IOK

DC Output Diode Current

−50

VO < GND

mA

+50

VO > VCC

mA

IO

DC Output Source/Sink Current

±50

mA

ICC

DC Supply Current Per Supply Pin

±100

mA

IGND

DC Ground Current Per Ground Pin

±100

mA

TSTG

Storage Temperature Range

−65 to +150

°C

TL

Lead Temperature, 1 mm from Case for

10 Seconds

TL = 260

°C

TJ

Junction Temperature Under Bias

TJ = 135

°C

qJA

Thermal Resistance (Note 2)

SOIC = 85

TSSOP = 100

°C/W

MSL

Moisture Sensitivity

Level 1

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. IO absolute maximum rating must be observed.

2. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Typ

Max

Units

VCC

Supply Voltage

Operating

Functional

1.65

1.2

3.6

V

VI

Input Voltage

0

5.5

V

VO

Output Voltage

HIGH or LOW State

3−State

0

VCC

5.5

V

IOH

HIGH Level Output Current

VCC = 3.0 V − 3.6 V

VCC = 2.7 V − 3.0 V

−24

−12

mA

IOL

LOW Level Output Current

VCC = 3.0 V − 3.6 V

VCC = 2.7 V − 3.0 V

24

12

mA

TA

Operating Free−Air Temperature

−40

+125

°C

Dt/DV

Input Transition Rise or Fall Rate

VCC = 1.65 V to 2.7 V

VCC = 2.7 V to 3.6 V

0

20

10

ns/V

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

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