92612 TKIM TC-00002817/D0606IP TIIM TB-00001536 No. A0422-1/8

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

August, 2013

TND316S

Excellent Power Device

Inverter and buffer driver for general purpose, Dual SOIC8

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Features

•

Inverter buffer

•

Monolithic structure (High voltage CMOS process adopted)

•

Withstand voltage of 25V is assured

•

Wide range of operating voltage : 4.5V to 25V

•

Peak output current : 1A

•

Fast switching time (30ns typical at 1000pF load)

•

Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V)

•

Built-in input pull-down resistance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Supply Voltage

VDD

0 to 25

V

Input Voltage

VIN

GND--0.3 to VDD+0.3

V

Allowable Power Dissipation

PD max

0.3

W

Junction Temperature

Tj

--55 to +150

°C

Storage Temperature

Tstg

--55 to +150

°C

Package Dimensions

unit : mm (typ)

7072-005

Ordering number : ENA0422A

Product & Package Information

• Package

: SOIC8

• JEITA, JEDEC

: SC-87, SOT-96

• Minimum Packing Quantity : 2,500 pcs./reel

Packing Type: TL

Marking

Block Diagram

4.9

0.22

14

5

8

0.445

1.27

1 : NC

2 : IN A

3 : GND

4 : IN B

5 : OUT B

6 : VDD

7 : OUT A

8 : NC

SOIC8

TL

TND

LOT No.

316

TND316S-TL-2H

VDD

IN

OUT

INVERTING

NON-INVERTING

GND