© Semiconductor Components Industries, LLC, 2014

May, 2014 − Rev. 0

1

Publication Order Number:

NGTB50N60SW/D

NGTB50N60SWG

IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Field Stop (FS) Trench construction, and provides

superior performance in demanding switching applications, offering

both low on state voltage and minimal switching loss. The IGBT is

well suited for half bridge resonant applications. Incorporated into the

device is a soft and fast co−packaged free wheeling diode with a low

forward voltage.

Features

Typical Applications

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−emitter voltage

600

V

Collector current

°C

°C

100

50

A

200

A

Diode forward current

°C

°C

100

50

A

200

A

Gate−emitter voltage

$20

V

Power Dissipation

°C

°C

W

Operating junction temperature

range

−55 to +150

°C

Storage temperature range

−55 to +150

°C

Lead temperature for soldering, 1/8”

from case for 5 seconds

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

TO−247

CASE 340L

STYLE 4

C

G

50 A, 600 V

E

Device

Package

Shipping

ORDERING INFORMATION

NGTB50N60SWG

TO−247

(Pb−Free)

30 Units / Rail

http://onsemi.com

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

MARKING DIAGRAM

50N60SW

AYWWG

G

E

C