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2N2221A Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. 2N2221A
Description  NPN SILICON SWITCHING TRANSISTOR
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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 1 page
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TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
Devices
Qualified Level
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
JAN
JANTX
JANTXV
JANS
JANHC
MAXIMUM RATINGS
Ratings
Symbol
All Types
Unit
Collector-Emitter Voltage
VCEO
50
Vdc
Collector-Base Voltage
VCBO
75
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current
IC
800
mAdc
Total Power Dissipation @ TA = +25
0C
2N2221A, L; 2N2222A, L
(1)
2N2221AUA; 2N2222AUA
(2)
2N2221AUB; 2N2222AUB
(1)
PT
0.5
0.65
0.50
W
Operating & Storage Junction Temperature Range
Top, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Ambient
2N2221A, L; 2N2222A, L
2N2221AUA; 2N2222AUA
2N2221AUB; 2N2222AUB
RθJA
325
210
325
0C/W
1) Derate linearly 3.08 mW/
0C above TA > +37.50C
2) Derate linearly 4.76 mW/
0C above TA > +63.50C
TO-18* (TO-206AA)
2N2221A, 2N2222A
4 PIN*
2N2221AUA, 2N2222AUA
3 PIN*
2N2221AUB, 2N2222AUB
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
V(BR)CEO
50
Vdc
Collector-Base Cutoff Current
VCB= 75 Vdc
VCB= 60 Vdc
ICBO
10
10
µAdc
ηAdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
VEB = 4.0 Vdc
IEBO
10
10
µAdc
ηAdc
Collector-Base Cutoff Current
VCE = 50 Vdc
ICES
50
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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