NCP3233

www.onsemi.com

9

+25

°C for typical values)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

POWER SUPPLY

VIN Operation Voltage

VIN

3.0

21

V

VINX Operation Voltage

VINX

VINX not connected to GND

3.0

5.5

V

VCC Operation Voltage

VCC

Vin > 5 V

5.0

21

V

VB UVLO Threshold (Rising)

4.2

4.4

4.5

V

VB UVLO Threshold (Falling)

3.9

4.0

4.1

V

VINX UVLO Threshold (Rising)

2.7

2.9

3.05

V

VINX UVLO Threshold (Falling)

2.4

2.6

2.8

V

VINX UVLO Hysteresis

0.275

V

VB UVLO Falling Blanking Time

2

ms

VB Output Voltage

VB

4.9

5.15

5.45

V

VB Dropout Voltage

50

100

mV

VB Current Limit

100

mA

VCC Quiescent Current

EN = H, COMP = H, no switching; PG open

4.5

7

mA

Shutdown Supply Current

110

130

mA

70

80

mA

XCP Frequency

250

kHz

XCP Drive Low Resistance

3.3

W

XCP Drive High Resistance

7.7

W

FEEDBACK VOLTAGE

FB Input Voltage

0.597

0.6

0.603

V

−40

0.594

0.6

0.606

Feedback Input Bias Current

IFB

75

nA

ERROR AMPLIFIER

Open Loop DC Gain (GBD)

60

85

dB

Open Loop Unity Gain Band-

width

F0dB,EA

24

MHz

Open Loop Phase Margin

60

°

Slew Rate

COMP pin to GND = 10 pF

2.5

V/

m

COMP Clamp Voltage, High

3.1

3.4

3.6

V

COMP Clamp Voltage, Low

0.5

V

Output Source Current

18

m

A

Output Sink Current

20

m

A

CURRENT LIMIT

Low−side RDSON over ISET

Current

RDSON/ISET

See OCP section for more information

56.5

59.0

61.5

W/A

Low−side ISET Current Source

Temperature Coefficient

TC_LS_I−SET

+0.23

%/

°C

Low−side OCP Switch−over

Threshold

600

mV

Low−side Programmable OCP

Range

LS_OCPth

Guaranteed by characterization

600

mV

High−side Fixed OCP

HS_OCP

30

A

HS OCP Min on time

HS_Tblnk

150

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.