MMFT2N25E

http://onsemi.com

2

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Temperature Coefficient (Positive)

250

—

—

324

—

—

Vdc

V/°C

Zero Gate Voltage Drain Current

—

—

—

—

10

100

μAdc

Gate−Body Leakage Current

—

—

100

nAdc

Gate Threshold Voltage

Threshold Temperature Coefficient (Negative)

2.0

—

2.8

5.7

4.0

—

Vdc

mV/°C

Static Drain−to−Source On−Resistance

—

2.1

3.5

Ohms

Drain−to−Source On−Voltage

—

—

—

—

8.40

7.35

Vdc

Forward Transconductance

0.44

1.2

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

f = 1.0 MHz)

—

137

190

pF

Output Capacitance

—

30

40

Transfer Capacitance

—

7.0

10

Turn−On Delay Time

—

9.2

20

ns

Rise Time

—

6.6

10

Turn−Off Delay Time

—

13

30

Fall Time

—

8.5

20

Gate Charge

—

4.7

10

nC

—

1.3

—

—

3.2

—

—

2.3

—

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

—

0.94

2.0

Vdc

—

0.83

—

Reverse Recovery Time

—

104

—

nS

—

63

—

—

41

—

Reverse Recovery Stored Charge

—

0.365

—

mC

(1) Pulse Test: Pulse Width ≤ 300 μS, Duty Cycle ≤ 2%.