© Semiconductor Components Industries, LLC, 2015

September, 2015 − Rev. 1

Publication Order Number:

BAS21TMR6/D

1

BAS21TMR6

High Voltage Switching

Diode

The BAS21TMR6T1G device houses three high−voltage switching

diodes in a SC−74 surface mount package. This device is ideal for

low−power surface mount applications where board space is at a

premium.

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Compliant

Rating

Symbol

Value

Unit

Reverse Voltage

250

Vdc

Forward Current

200

mAdc

Peak Forward Surge Current

625

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Derate above 25

°C

311

2.5

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

402

°C/W

Total Device Dissipation

Derate above 25

°C

347

2.8

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

360

°C/W

Junction and Storage Temperature

− 55 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

250 V

HIGH VOLTAGE

SWITCHING DIODE

www.onsemi.com

Device

Package

ORDERING INFORMATION

SC−74

CASE 318F

1 2

4

3

5

6

MARKING DIAGRAM

BAS21TMR6T1G

SC−74

(Pb−Free)

3000 /

Tape & Reel

RAA M

G

G

RAA

= Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

1

23

65

4

NSVBAS21TMR6T1G

SC−74

(Pb−Free)

3000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NSVBAS21TMR6T2G

SC−74

(Pb−Free)

3000 /

Tape & Reel