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VS-20MQ040-M3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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VS-20MQ040-M3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page VS-20MQ040-M3 www.vishay.com Vishay Semiconductors Revision: 12-Oct-11 1 Document Number: 93370 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Schottky Rectifier, 2 A FEATURES • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition • Small foot print, surface mountable • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC DESCRIPTION The VS-20MQ040-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. PRODUCT SUMMARY Package DO-214AC (SMA) IF(AV) 2 A VR 40 V VF at IF 0.63 V IRM 26 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 3.0 mJ Cathode Anode DO-214AC (SMA) MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 2 A VRRM 40 V IFSM tp = 5 μs sine 120 A VF 2 Apk, TJ = 125 °C 0.63 V TJ Range - 55 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL VS-20MQ040-M3 UNITS Maximum DC reverse voltage VR 40 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 4 IF(AV) 50 % duty cycle at TC = 110 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 2.1 A 50 % duty cycle at TC = 112 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 2 Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied 120 A 10 ms sine or 6 ms rect. pulse 30 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 6 mH 3 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A |
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