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VFT2045C-M3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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VFT2045C-M3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page VFT2045C-M3 www.vishay.com Vishay General Semiconductor Revision: 22-Nov-13 1 Document Number: 89354 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 45 V IFSM 160 A VF at IF = 10 A 0.41 V TJ max. 150 °C Package ITO-220AB Diode variation Dual common cathode PIN 1 PIN 2 PIN 3 TMBS ® ITO-220AB 1 2 3 VFT2045C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VFT2045C UNIT Maximum repetitive peak reverse voltage VRRM 45 V Maximum average forward rectified current (fig. 1) per device IF(AV) 20 A per diode 10 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 160 A Isolation voltage from termal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG -40 to +150 °C |
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