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NTS1045MFST1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTS1045MFST1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page NTS1045MFS, NRVTS1045MFS http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 166°C) IF(AV) 10 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 162°C) IFRM 20 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 210 A Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature TJ −55 to +150 °C Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) EAS 100 mJ ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) RθJC − 2.0 °C/W ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 5.0 Amps, TJ = 25°C) (iF = 10 Amps, TJ = 25°C) (iF = 5.0 Amps, TJ = 125°C) (iF = 10 Amps, TJ = 125°C) vF 0.42 0.48 0.34 0.41 − 0.57 − 0.51 V Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) iR 20 7.0 120 45 mA mA Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz) Cd 300 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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