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NIMD6001N Datasheet(PDF) 1 Page - ON Semiconductor |
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NIMD6001N Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 9 page © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 6 1 Publication Order Number: NIMD6001N/D NIMD6001N, NIMD6001AN Dual N-Channel Driver with Diagnostic Output 60 V, 3 A, 110 mW NIMD6001N/AN is a dual 3 Amp low-side switch with an integrated common disable input and drain diagnostic output. Pulling the Disable pin low will override any applied gate voltages and turn off both FET switches. Should either Drain-Source voltage exceed approximately 50 V, a logic 1 (> 3 V) will be asserted on the Diagnostic/Feedback pin. Internal isolation diodes permit the Disable and Diagnostic/ Feedback pins of multiple devices to be interconnected in a “wired-OR” configuration without additional components. Features • RDSON 110 mW Maximum at VGS = 10 V • Avalanche Energy Specified • Gate Drive Disable Input • Drain-Source Voltage Diagnostic Feedback Output • Electrically Isolated Drains for Low Crosstalk • Internal Resistors Limit Peak Transient gate Current • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Injector Driver • Solenoid / Relay Driver MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage (DC, sustained) VDSS 60 Vdc Gate−to−Source Voltage VGS "20 Vdc Continuous Drain Current VGS = 10 V, RqJA = 55°C/W VGS = 5.0 V, RqJA = 55°C/W ID 3.3 3.0 A Single Pulse Drain Current Pulse duration = 80 ms ID 10 A Single Pulse Drain-to-Source Avalanche Energy VDD = 60 V; VGS = 10 V; IPK = 2.6 A; L = 76 mH; Start Tj = 25°C EAS 258 mJ Operating Junction Temperature TJ −55 − 150 °C Storage Temperature TSTG −55 − 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3.0 AMPERES 60 VOLTS RDS(on) = 110 mW Device Package Shipping ORDERING INFORMATION NIMD6001NR2G SOIC−8 (Pb−Free) 2500/Tape & Reel SOIC−8 CASE 751 Drain 1 Disable Drain 2 Diag/Fbk Source 1 Gate 1 Source 2 Gate 2 (Top View) MARKING DIAGRAM D6001x = Specific Device Code x = N or A A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 1 2 3 4 5 6 7 8 http://onsemi.com 1 2 3 4 5 6 7 8 INTERNAL DIAGRAM (Note: Microdot may be in either location) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. NIMD6001ANR2G SOIC−8 (Pb−Free) 2500/Tape & Reel |
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