NIMD6001N datasheet(1/9 Pages) ONSEMI

Part #	NIMD6001N

Description	Dual N-Channel Driver

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Manufacturer	ONSEMI [ON Semiconductor]

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November, 2011 − Rev. 6

1

Publication Order Number:

NIMD6001N/D

NIMD6001N, NIMD6001AN

Dual N-Channel Driver with

Diagnostic Output

60 V, 3 A, 110 mW

NIMD6001N/AN is a dual 3 Amp low-side switch with an

integrated common disable input and drain diagnostic output. Pulling

the Disable pin low will override any applied gate voltages and turn off

both FET switches. Should either Drain-Source voltage exceed

approximately 50 V, a logic 1 (> 3 V) will be asserted on the

Diagnostic/Feedback pin. Internal isolation diodes permit the Disable

and Diagnostic/ Feedback pins of multiple devices to be

interconnected in a “wired-OR” configuration without additional

components.

Features

• RDSON 110 mW Maximum at VGS = 10 V

• Avalanche Energy Specified

• Gate Drive Disable Input

• Drain-Source Voltage Diagnostic Feedback Output

• Electrically Isolated Drains for Low Crosstalk

• Internal Resistors Limit Peak Transient gate Current

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Automotive Injector Driver

• Solenoid / Relay Driver

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage (DC, sustained)

VDSS

60

Vdc

Gate−to−Source Voltage

VGS

"20

Vdc

Continuous Drain Current

VGS = 10 V, RqJA = 55°C/W

VGS = 5.0 V, RqJA = 55°C/W

ID

3.3

3.0

A

Single Pulse Drain Current

Pulse duration = 80 ms

ID

10

A

Single Pulse Drain-to-Source

Avalanche Energy

VDD = 60 V; VGS = 10 V; IPK = 2.6 A;

L = 76 mH; Start Tj = 25°C

EAS

258

mJ

Operating Junction Temperature

TJ

−55 − 150

°C

Storage Temperature

TSTG

−55 − 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

3.0 AMPERES

60 VOLTS

RDS(on) = 110 mW

Device

Package

Shipping

ORDERING INFORMATION

NIMD6001NR2G

SOIC−8

(Pb−Free)

2500/Tape & Reel

SOIC−8

CASE 751

Drain 1

Disable

Drain 2

Diag/Fbk

Source 1

Gate 1

Source 2

Gate 2

(Top View)

MARKING DIAGRAM

D6001x = Specific Device Code

x = N or A

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

1

2

3

4

5

6

7

8

http://onsemi.com

1

2

3

4

5

6

7

8

INTERNAL DIAGRAM

(Note: Microdot may be in either location)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NIMD6001ANR2G

SOIC−8

(Pb−Free)

2500/Tape & Reel

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Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NIMD6001NR2G	227Kb / 9P	Dual N-Channel Driver with Diagnostic Output 60 V, 3 A, 110 m September, 2009 ??Rev. 4

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