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LV8013T Datasheet(PDF) 2 Page - ON Semiconductor

Part # LV8013T
Description  Forward/Reverse Motor Driver
Download  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

LV8013T Datasheet(HTML) 2 Page - ON Semiconductor

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LV8013T
No.A0907-2/6
Allowable Operating Conditions at Ta = 25
°C, SGND = PGND = 0V
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage (For load)
VM
2.0 to 15.0
V
Supply voltage (For control)
VCC
2.7 to 5.5
V
Input signal voltage
VIN
0 to VCC
V
Input signal frequency
f max
Duty = 50%
200
kHz
Capacitor for charge pump
C1, C2,
CVG1, CVG2
0.001 to 0.1
μF
Electrical Characteristics at Ta
= 25°C, VCC = 5.0V, VM = 12.0V, SGND = PGND = 0V, unless especially specified.
Ratings
Parameter
Symbol
Conditions
Re-
marks
min
typ
max
Unit
Supply current for load at
standby 1
IM1
EN = 0V
1
1.0
μA
Supply current for load at
standby 2
IM2
VCC = 0V, Each input = 0V
1
1.0
μA
Supply current for control at
standby
ICO
EN = 0V, IN1 = IN2 = 0V
2
12.5
25
50
μA
Current drain during operation 1
IC1
VCC = 3.3V, EN = 3.3V, VG at no load
3
0.6
1.0
mA
Current drain during operation 2
IC2
VCC = 5.0V, EN = 5V, VG at no load
3
0.7
1.2
mA
H-level input voltage
VIH
2.7V
≤ VCC ≤ 5.5V
0.6
×VCC
VCC
V
L-level input voltage
VIL
2.7V
≤ VCC ≤ 5.5V
0
0.2
×VCC
V
H-level input current
(IN1, IN2, TIN)
IIH
VIN = 5V
4
12.5
25
50
μA
L-level input current
(IN1, IN2, TIN)
IIL
VIN = 0V
4
-1.0
μA
Pull-up resistance (EN)
RUP
4
100
200
400
k
Ω
Pull-down resistance
(EN)
RDN
4
100
200
400
k
Ω
Output ON resistance
RON
Sum of ON resistances at top and
bottom
5
0.3
0.5
Ω
Charge pump voltage1
VG1
VCC×2 - 5.4V CLAMP circuit
6
5.15
5.4
5.65
V
Charge pump voltage2
VG2
VM + VG1 Voltage raising circuit
6
17.1
17.4
17.6
V
Low-voltage detection operation
voltage
VCS
VCC voltage
7
2.1
2.25
2.4
V
Thermal shutdown operation
temperature
Tth
Design guarantee
8
150
180
210
°C
Charge pump capacity 1
VG1LOAD
IG1 = 500
μA
9
5.0
5.3
V
Charge pump capacity 2
VG2LOAD
IG2 = 500
μA
9
16.0
16.5
V
IG current dissipation
(Fin = 20kHz)
IG
10
350
μA
Charge pump start time
TVG
CVG = 0.1
μF
11
1.0
ms
Turn on time
TPLH
12
0.5
1.0
μs
Output
block
Turn off time
TPHL
12
0.5
1.0
μs
Turn on time
TON
C = 500pF
12
0.5
20
μs
TOUT
Turn off time
TOFF
C = 500pF
12
0.5
20
μs
TOUT output voltage H
TOH
C = 500pF
VG2-0.1
VG2
V
TOUT output voltage L
TOL
C = 500pF
0.05
0.1
V
* Design guarantee : This characteristics is not measured.
Refer to next page for remarks.


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