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ESD8351HT1G Datasheet(PDF) 3 Page - ON Semiconductor |
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ESD8351HT1G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 10 page ESD8351, SZESD8351 www.onsemi.com 3 Figure 1. CV Characteristics VBias (V) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 FREQUENCY 0 0.1 0.2 0.3 0.4 0.5 1.0 12 3 5 6 7 9 FREQUENCY (Hz) −14 −12 −10 −8 −6 −4 −2 0 2 1E7 1E8 1E9 1E10 20 16 14 12 8 4 2 0 02 20 16 14 12 46 8 10 VC, VOLTAGE (V) 3E10 m1 m2 0.6 0.7 0.8 0.9 48 10 18 6 10 18 10 8 6 4 2 0 20 16 14 12 8 4 2 0 02 20 16 14 12 46 8 10 VC, VOLTAGE (V) 18 6 10 18 10 8 6 4 2 0 Figure 2. Clamping Voltage vs Peak Pulse Current ( tp = 8/20 ms) Ipk (A) 0 1 2 3 4 5 10 1 1.5 2 3 3.5 4 5 6 7 8 9 2.5 4.5 5.5 Figure 3. RF Insertion Loss Figure 4. Capacitance over Frequency Figure 5. Positive TLP I−V Curve Figure 6. Negative TLP I−V Curve 6 |
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