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M20HXXCT Datasheet(PDF) 1 Page - Vishay Siliconix |
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M20HXXCT Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page M20HxxCT, MF20HxxCT www.vishay.com Vishay General Semiconductor Revision: 22-Jan-15 1 Document Number: 87736 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3_A • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters and polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 90 V to 100 V IFSM 250 A IR 4.5 μA VF 0.64 TJ max. 175 °C Package TO-220AB, ITO-220AB Diode variations Dual Common Cathode CASE PIN 2 PIN 1 PIN 3 TO-220AB M20H90CT M20H100CT ITO-220AB MF20H90CT MF20H100CT 1 2 3 PIN 2 PIN 1 PIN 3 1 2 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL M20H90CT M20H100CT UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 Maximum DC blocking voltage VDC 90 100 Maximum average forward rectified current total device IF(AV) 20 A per diode 10 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 250 Peak repetitive reverse current per diode at tp = 2.0 µs, 1 kHz IRRM 1.0 Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range TJ. TSTG -65 to +175 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V |
Similar Part No. - M20HXXCT_15 |
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Similar Description - M20HXXCT_15 |
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