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NCP6361AFCCT1G Datasheet(PDF) 1 Page - ON Semiconductor

Part # NCP6361AFCCT1G
Description  Buck Converter with Bypass Mode for RF Power Amplifiers
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP6361AFCCT1G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 5
1
Publication Order Number:
NCP6361/D
NCP6361
Buck Converter with
Bypass Mode for RF Power
Amplifiers
The NCP6361, a PWM synchronous step−down DC−to−DC
converter, is optimized for supplying RF Power Amplifiers (PAs) used
in 3G/4G wireless systems (Mobile / Smart Phones, Tablets,
…)
powered by single−cell Lithium−Ion batteries. The device is able to
deliver up to 2 A current in bypass mode and 800 mA in buck mode.
The output voltage is monitorable from 0.4 V to 3.5 V by an analog
control pin VCON. The analog control allows dynamically optimizing
the RF Power Amplifier’s efficiency through the monitoring of the PA
output power. With an improved overall system efficiency the
communication time and phone autonomy can be consequently
increased. At light load for optimizing the DC−to−DC converter
efficiency, the NCP6361 enters automatically in PFM mode and
operates in a slower switching frequency. The NCP6361 enters in
bypass mode when the desired output voltage becomes close to the
input voltage (e.g.: low battery conditions). The device operates at
3.429 MHz or 6 MHz switching frequency. This way the system
tuning can focus respectively either on a better efficiency (3.249 MHz)
or on employing smaller value inductor and capacitors (6 MHz).
Synchronous rectification and automatic PFM / PWM / By−Pass
operating mode transitions improve overall solution efficiency. The
NCP6361 has two versions: NCP6361A and NCP6361B. Version B
has a spread spectrum function for low EMI operation. The NCP6361
is available in a space saving, low profile 1.36 x 1.22 mm CSP−9
package.
Features
Input Voltage from 2.5 V to 5.5 V for Battery Powered
Applications
Adjustable Output Voltage (0.4 V to 3.50 V)
3.429 / 6 MHz Selectable Switching Frequency
Uses 470 nH Inductor and 4.7 mF Capacitor for
Optimized Footprint and Solution Thickness
PFM /PWM/Bypass Automatic Mode Change for High
Efficiency
Low 45 mA Quiescent Current
Thermal Protections to Avoid Damage of the IC
Small 1.36 x 1.22 mm / 0.4 mm Pitch CSP Package
This is a Pb−Free Device
Typical Applications
3G / 4G Wireless Systems, Smart−Phones and Webtablets
Battery or
System
Supply
10uF
0.47uH
4.7uF
V
NCP6361
FB
PVIN
SW
PGND
Enabling
Thermal
Protection
BPEN
EN
AGND
Bypass Control
VCON
Vout Control
Bypass
DCDC
1.0A
3.43/6.00 MHz
VBATT
Bypass
Enable
Figure 1. NCP6361 Block Diagram
OUT
FSEL
WLCSP9
CASE 567GM
MARKING
DIAGRAM
http://onsemi.com
See detailed ordering, marking and shipping information on
page 19 of this data sheet.
ORDERING INFORMATION
6361x = Specific Device Code
x = A or B
A
= Assembly Location
L
= Wafer Lot
Y
= Year
WW = Work Week
G
= Pb−Free Package
6361x
ALYWW
G


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