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VB20M120C-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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VB20M120C-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page VB20M120C-E3 www.vishay.com Vishay General Semiconductor Revision: 09-Sep-13 2 Document Number: 89466 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 20 ms RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage per diode IF = 5 A TA = 25 °C VF (1) 0.65 - V IF = 10 A 0.82 0.91 IF = 5 A TA = 125 °C 0.55 - IF = 10 A 0.64 0.72 Reverse current per diode VR = 90 V TA = 25 °C IR (2) 3- μA TA = 125 °C 1.5 - mA VR = 120 V TA = 25 °C - 700 μA TA = 125 °C 4 25 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VB20M120C UNIT Typical thermal resistance per diode RJC 2.8 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VB20M120C-E3/4W 1.37 4W 50/tube Tube TO-263AB VB20M120C-E3/8W 1.37 8W 800/reel Tape and reel Case Temperature (°C) 25 20 15 10 5 0 025 50 75 100 125 150 175 Resistive or Inductive Load Mounted on Specific Heatsink 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 012 34 56 78 9 10 11 12 Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 1.0 D = 0.8 D = t p/T t p T |
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