VF40100C datasheet(1/5 Pages) VISHAY

Part #	VF40100C

Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier

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Manufacturer	VISHAY [Vishay Siliconix]

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V40100C-E3, VF40100C, VB40100C-E3, VI40100C-E3

www.vishay.com

Vishay General Semiconductor

Revision: 14-Nov-14

1

Document Number: 89042

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.38 V at IF = 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per

JESD

22-B106

(for

TO-220AB,

ITO-220AB,

and

TO-262AA package)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum



PRIMARY CHARACTERISTICS

IF(AV)

2 x 20 A

VRRM

100 V

IFSM

250 A

VF at IF = 20 A

0.61 V

TJ max.

150 °C

Package

TO-220AB, ITO-220AB,

TO-263AB, TO-262AA

Diode variations

Dual Common Cathode

TO-220AB

1

2

3

1

K

2

3

TO-263AB

1

2

K

TO-262AA

PIN 1

PIN 2

PIN 3

K

PIN 1

PIN 2

K

HEATSINK

PIN 1

PIN 2

PIN 3

PIN 1

PIN 2

CASE

PIN 3

C

0

1

0

4

F

V

C

0

1

0

4

V

VI40100C

VB40100C

TMBS

®

ITO-220AB

1

2

3

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40100C

VF40100C VB40100C

VI40100C

UNIT

Maximum repetitive peak reverse voltage

VRRM

100

V

Maximum average forward rectified current (fig. 1)

per device

IF(AV)

40

A

per diode

20

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

IFSM

250

A

Non-repetitive avalanche energy at TJ = 25 °C, L = 90 mH 

per diode

EAS

230

mJ

Peak repetitive reverse current at tp = 2 μs, 1 kHz, 

TJ = 38 °C ± 2 °C per diode

IRRM

1.0

A

Voltage rate of change (rated VR)

dV/dt

10 000

V/μs

Operating junction and storage temperature range

TJ, TSTG

-40 to +150

°C

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