Opto

Products

2830 S. Fairview St.

Santa Ana, CA 92704

PH: 714.979.8220

FAX: 714.557.5989

Data Sheet # MSC1334.PDF

Updated: September 1999

MXP 1158

Features

•

2,500 Volt electrical isolation

•

Standard 8-pin DIP package

•

High current transfer ratio for low IF

•

Screening similar to JANTX, JANTXV or

JANS equivalent

Description

•

The MXP1158 consists of a light emitting diode and an NPN phototransistor.

•

The device is available in a hermetic 8-pin DIP package.

Phototransistor Optocoupler

LED Input Diode

2

3

5

6

NC

Absolute Maximum Ratings

SYMBOL

CHARCTERISTIC

CONDITIONS

Min

Max

UNITS

IC(on)

On-State Collector Current

IF = 1 mA, VCE = 5 Volts

1.0

8.0

mAmps

VCEsat

Saturation Voltage

IF = 2 mA, IC = 1.0 mA

0.3

Volts

BVceo

Breakdown Voltage

IC = 1.0 mA

40

Volts

BVebo

Breakdown Voltage

Ieb = 100 uA

7

Volts

ICE(off)

Off-State Leakage Current

VC = 20 Volts

100

nAmps

VF

Input Forward Voltage

IF = 10 mA

1.0

Volts

IR

Input Reverse Current

VR = 2.0 V

100.0

uAmps

tR

Rise Time

VCC = 10 Volts, RL = 100 Ohms

20

usec

tF

Fall Time

IF = 5 mA

20

usec

1

2

3

4

7

8

5

6

Reverse Voltage

2.0 Vdc minimum @ IR = 10 uA

Forward Voltage

1.95 Vdc maximum @ IF = 100 mA

Peak Forward Current

1.0 Amp @ 1 msec pulse width

Power Dissipation

200 mW

Input to Output Isolation

+/- 2,500 Vdc

Storage Temperature Range

-65 C to +150 C

Operating Temperature Range

-55 C to +125 C