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MX043J Datasheet(PDF) 3 Page - Microsemi Corporation

Part # MX043J
Description  RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MX043J Datasheet(HTML) 3 Page - Microsemi Corporation

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100% KND (Known-Good-Die) SCREENING
a.
100% die probe at Tambient= 25°C for BVDSS, VGSth, IDSS, IGSS, VSD, RDSon
b.
100% Visual Inspection i.a.w. method 2072 of MIL-STD-750
DIE ELEMENT EVALUATION
a.
Wafer Lot Evaluation Testing (WLAT) i.a.w. method 5001 of MIL-STD-750, including SEM
b.
Unclamped Inductive Switching (IAS) i.a.w. method 3470 of MIL-STD-750 at VGSpeak= 15 V, L= 100µH, IAS= 132 A
c.
Gate Stress Test for 250
µs at VGS= 30 Vdc.
d.
Safe Operating Area i.a.w. method 3474 of MIL-STD-750 at VDS= 160 V, ID= 2.8 A for 10 ms
e.
High Temperature Gate Bias i.a.w. method 1042 cond.B of MIL-STD-750: 48 hrs at Tambient= 150°C, Drain shorted to Source and
VGS= 16 V
f.
High Temperature Reverse Bias i.a.w. method 1042 cond.A of MIL-STD-750: 240 hrs at Tambient= 150°C, Gate shorted to Source
and VDS= 160 V
g.
Final DC Electrical Testing at Tambient= 25°C, 125°C and -55°C
h.
Temperature Cycling i.a.w. method 1051 of MIL-STD-750, 100 cycles, -55
°C to +150°C
i.
Group A Electrical Testing including dynamic parameters
j.
Steady State Operational Life Bias i.a.w. method 1042 cond.A of MIL-STD-750: 1000 hrs at Tambient= 150°C, Gate shorted to Source
and VDS= 160 V
k.
Final DC Electrical Testing at Tambient= 25°C, 125°C and -55°C
l.
Die Attach Evaluation i.a.w. method 2017 of MIL-STD-750
m.
Bond Strength Evaluation i.a.w. 2037 of MIL-STD-750
RADIATION EVALUATION
Total Dose Irradiation i.a.w. method 1019 of MIL-STD-750, dose= 100 kRAD, Drain shorted to Source, VGS= 10V
Total Dose Irradiation i.a.w. method 1019 of MIL-STD-750, dose= 100 kRAD, Gate shorted to Source, VDS= 160V
Evaluation criteria: no degradation of the DC electrical parameters exceeding the data sheet limits allowed after total dose irradiation.


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