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MX043J Datasheet(PDF) 3 Page - Microsemi Corporation |
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MX043J Datasheet(HTML) 3 Page - Microsemi Corporation |
3 / 4 page 100% KND (Known-Good-Die) SCREENING a. 100% die probe at Tambient= 25°C for BVDSS, VGSth, IDSS, IGSS, VSD, RDSon b. 100% Visual Inspection i.a.w. method 2072 of MIL-STD-750 DIE ELEMENT EVALUATION a. Wafer Lot Evaluation Testing (WLAT) i.a.w. method 5001 of MIL-STD-750, including SEM b. Unclamped Inductive Switching (IAS) i.a.w. method 3470 of MIL-STD-750 at VGSpeak= 15 V, L= 100µH, IAS= 132 A c. Gate Stress Test for 250 µs at VGS= 30 Vdc. d. Safe Operating Area i.a.w. method 3474 of MIL-STD-750 at VDS= 160 V, ID= 2.8 A for 10 ms e. High Temperature Gate Bias i.a.w. method 1042 cond.B of MIL-STD-750: 48 hrs at Tambient= 150°C, Drain shorted to Source and VGS= 16 V f. High Temperature Reverse Bias i.a.w. method 1042 cond.A of MIL-STD-750: 240 hrs at Tambient= 150°C, Gate shorted to Source and VDS= 160 V g. Final DC Electrical Testing at Tambient= 25°C, 125°C and -55°C h. Temperature Cycling i.a.w. method 1051 of MIL-STD-750, 100 cycles, -55 °C to +150°C i. Group A Electrical Testing including dynamic parameters j. Steady State Operational Life Bias i.a.w. method 1042 cond.A of MIL-STD-750: 1000 hrs at Tambient= 150°C, Gate shorted to Source and VDS= 160 V k. Final DC Electrical Testing at Tambient= 25°C, 125°C and -55°C l. Die Attach Evaluation i.a.w. method 2017 of MIL-STD-750 m. Bond Strength Evaluation i.a.w. 2037 of MIL-STD-750 RADIATION EVALUATION Total Dose Irradiation i.a.w. method 1019 of MIL-STD-750, dose= 100 kRAD, Drain shorted to Source, VGS= 10V Total Dose Irradiation i.a.w. method 1019 of MIL-STD-750, dose= 100 kRAD, Gate shorted to Source, VDS= 160V Evaluation criteria: no degradation of the DC electrical parameters exceeding the data sheet limits allowed after total dose irradiation. |
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