V10150S_15 datasheet(1/5 Pages) VISHAY

Part #	V10150S

Description	High Voltage Trench MOS Barrier Schottky Rectifier

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Manufacturer	VISHAY [Vishay Siliconix]

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V10150S, VF10150S, VB10150S, VI10150S

www.vishay.com

Vishay General Semiconductor

Revision: 13-Aug-13

1

Document Number: 89058

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.59 V at IF = 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB,

and TO-262AA package)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AB,

ITO-220AB,

TO-263AB

and

TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs max.

PRIMARY CHARACTERISTICS

IF(AV)

10 A

VRRM

150 V

IFSM

120 A

VF at IF = 10 A

0.69 V

TJ max.

150 °C

Package

TO-220AB, ITO-220AB,

TO-263AB, TO-262AA

Diode variation

Single die

PIN 1

PIN 2

PIN 3

K

PIN 1

PIN 2

PIN 3

PIN 1

PIN 2

CASE

PIN 3

TO-220AB

V10150S

1

2

3

TMBS

®

VI10150S

TO-262AA

VB10150S

NC

A

K

HEATSINK

NC

A

K

TO-263AB

1

K

2

3

VF10150S

ITO-220AB

1

2

3

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V10150S

VF10150S

VB10150S

VI10150S

UNIT

Max. repetitive peak reverse voltage

VRRM

150

V

Max. average forward rectified current (fig. 1)

IF(AV)

10

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

IFSM

120

A

Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH

EAS

70

mJ

Peak repetitive reverse current



at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C

IRRM

0.5

A

Voltage rate of change (rated VR)

dV/dt

10 000

V/μs

Isolation voltage (ITO-220AB only)



from terminal to heatsink t = 1 min

VAC

1500

V

Operating junction and storage temperature range

TJ, TSTG

- 55 to + 150

°C

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