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V35DM120-M3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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V35DM120-M3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page V35DM120-M3, V35DM120HM3 www.vishay.com Vishay General Semiconductor Revision: 05-Mar-15 1 Document Number: 87603 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application. MECHANICAL DATA Case: TO-263AC (SMPD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Notes (1) With infinite heatsink (2) With recommended pad size, 2 oz FR4 PCB PRIMARY CHARACTERISTICS IF(AV) 35 A VRRM 120 V IFSM 320 A VF at IF = 35 A (TA = 125 °C) 0.73 V TJ max. 175 °C Package TO-263AC (SMPD) Diode variations Single die V35DM120 Top View Bottom View PIN 1 K HEATSINK PIN 2 K 1 2 TMBS ® eSMP® Series TO-263AC (SMPD) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V35DM120 UNIT Maximum repetitive peak reverse voltage VRRM 120 V Maximum average forward rectified current (fig. 1) IF(AV) (1) 35 A IF(AV) (2) 6.3 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 320 A Operating junction and storage temperature range TJ, TSTG -40 to +175 °C |
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