V30M120CXM3_15 datasheet(2/5 Pages) VISHAY

Part #	V30M120CXM3

Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Manufacturer	VISHAY [Vishay Siliconix]

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V30M120CxM3, VI30M120CxM3

www.vishay.com

Vishay General Semiconductor

Revision: 29-Nov-13

2

Document Number: 89464

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

 5 ms

Notes

(1) The heat generated must be less than the thermal conductivity from junction-to-ambient dPD/dTJ < 1/RJA

(2) Free air, without heatsink

Note

(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics Per Diode

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage per diode

IF = 5 A

TA = 25 °C

VF (1)

0.60

-

V

IF = 7.5 A

0.67

-

IF = 15 A

0.87

0.98

IF = 5 A

TA = 125 °C

0.52

-

IF = 7.5 A

0.57

-

IF = 15 A

0.68

0.76

Reverse current per diode

VR = 90 V

TA = 25 °C

IR (2)

3.5

-

μA

TA = 125 °C

2

-

mA

VR = 120 V

TA = 25 °C

-

800

μA

TA = 125 °C

5

27

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V30M120C

VI30M120C

UNIT

Typical thermal resistance (1)

per diode

RJC

2.2

°C/W

per device

1.3

per device

RJA (2)

45

55

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

V30M120C-M3/4W

1.89

4W

50/tube

Tube

TO-220AB

V30M120CHM3/4W

1.89

4W

50/tube

Tube

TO-262AA

VI30M120C-M3/4W

1.45

4W

50/tube

Tube

TO-262AA

VI30M120CHM3/4W

1.45

4W

50/tube

Tube

0

2

4

6

8

10

12

14

16

18

20

22

0

25

50

75

100

125

150

175

Case Temperature (

°C)

RthJA=RthJC=1.6oC/W

RthJA=45oC/W

for TO-220AB

RthJA=55oC/W

for TO-262AA

0

1

2

3

4

5

6

7

8

9

012

34

56

78

9

10 11 12

Average Forward Current (A)

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 1.0

D = 0.8

D = t

p/T

t

p

T

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V30M120CXM3 Datasheet(PDF) 2 Page - Vishay Siliconix

V30M120CXM3 Datasheet(HTML) 2 Page - Vishay Siliconix

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