VS-FA72SA50LC_15 datasheet(7/10 Pages) VISHAY

Part #	VS-FA72SA50LC

Description	Power MOSFET, 72 A

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Manufacturer	VISHAY [Vishay Siliconix]

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VS-FA72SA50LC

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Vishay Semiconductors

Revision: 13-Aug-13

7

Document Number: 94782

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Fig. 19c - Peak Diode Recovery dV/dt Test Circuit

Fig. 20 - For N-Channel Power MOSFETs

+

-

+

-

• dV/dt controlled by R

G

• Driver same type as D.U.T.

• I

SD controlled by duty factor "D"

• D.U.T. - Device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

1

2

4

3

R

G

V

DD

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple ≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

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