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NVMFS5885NLWFT3G Datasheet(PDF) 2 Page - ON Semiconductor |
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NVMFS5885NLWFT3G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NVMFS5885NL http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 V Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 60 V TJ = 25°C 1.0 mA TJ = 125°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ± 20 V ±100 nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 2.5 V Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 15 A 11.6 15 mW VGS = 4.5 V, ID = 15 A 15.2 21 CHARGES AND CAPACITANCES Input Capacitance Ciss VGS = 0 V, f = 1 MHz, VDS = 25 V 1340 pF Output Capacitance Coss 125 Reverse Transfer Capacitance Crss 85 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V, ID = 15 A 12 nC Threshold Gate Charge QG(TH) 1.1 Gate−to−Source Charge QGS 4.0 Gate−to−Drain Charge QGD 6.3 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V, ID = 15 A 21 nC SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time td(ON) VGS = 4.5 V, VDS = 48 V, ID = 15 A, RG = 2.5 W 10 ns Rise Time tr 64 Turn−Off Delay Time td(OFF) 18 Fall Time tf 52 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 15 A TJ = 25°C 0.8 1.2 V TJ = 125°C 0.7 Reverse Recovery Time tRR VGS = 0 V, dIs/dt = 100 A/ms, IS = 15 A 20 ns Charge Time ta 15 Discharge Time tb 5.0 Reverse Recovery Charge QRR 16 nC 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. |
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