NVMFS5885NLWFT3G datasheet(2/6 Pages) ONSEMI

Part #	NVMFS5885NLWFT3G

Description	Single N?묬hannel Power MOSFET

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NVMFS5885NL

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

60

V

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 60 V

TJ = 25°C

1.0

mA

TJ = 125°C

10

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ± 20 V

±100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.5

2.5

V

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V, ID = 15 A

11.6

15

mW

VGS = 4.5 V, ID = 15 A

15.2

21

CHARGES AND CAPACITANCES

Input Capacitance

Ciss

VGS = 0 V, f = 1 MHz,

VDS = 25 V

1340

pF

Output Capacitance

Coss

125

Reverse Transfer Capacitance

Crss

85

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 48 V, ID = 15 A

12

nC

Threshold Gate Charge

QG(TH)

1.1

Gate−to−Source Charge

QGS

4.0

Gate−to−Drain Charge

QGD

6.3

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 48 V, ID = 15 A

21

nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDS = 48 V,

ID = 15 A, RG = 2.5 W

10

ns

Rise Time

tr

64

Turn−Off Delay Time

td(OFF)

18

Fall Time

tf

52

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 15 A

TJ = 25°C

0.8

1.2

V

TJ = 125°C

0.7

Reverse Recovery Time

tRR

VGS = 0 V, dIs/dt = 100 A/ms,

IS = 15 A

20

ns

Charge Time

ta

15

Discharge Time

tb

5.0

Reverse Recovery Charge

QRR

16

nC

4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperatures.

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