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NSI45025AZ Datasheet(PDF) 2 Page - ON Semiconductor |
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NSI45025AZ Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page NSI45025AZ, NSV45025AZ http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Steady State Current @ Vak = 7.5 V (Note 1) Ireg(SS) 22.5 25 27.5 mA Voltage Overhead (Note 2) Voverhead 1.8 V Pulse Current @ Vak = 7.5 V (Note 3) Ireg(P) 23.4 26 28.65 mA Capacitance @ Vak = 7.5 V (Note 4) C 2.6 pF Capacitance @ Vak = 0 V (Note 4) C 6.9 pF 1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 10 sec, using FR−4 @ 300 mm2 2 oz. Copper traces, in still air. 2. Voverhead = Vin − VLEDs. Voverhead is typical value for 75% Ireg(SS). 3. Ireg(P) non−repetitive pulse test. Pulse width t ≤ 300 msec. 4. f = 1 MHz, 0.02 V RMS. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation (Note 5) TA = 25°C Derate above 25°C PD 954 7.6 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 5) RθJA 131 °C/W Thermal Reference, Junction−to−Lead 4 (Note 5) RψJL4 40.8 °C/W Total Device Dissipation (Note 6) TA = 25°C Derate above 25°C PD 1074 8.6 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 6) RθJA 116 °C/W Thermal Reference, Junction−to−Lead 4 (Note 6) RψJL4 39.9 °C/W Total Device Dissipation (Note 7) TA = 25°C Derate above 25°C PD 1150 9.2 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 7) RθJA 109 °C/W Thermal Reference, Junction−to−Lead 4 (Note 7) RψJL4 42 °C/W Total Device Dissipation (Note 8) TA = 25°C Derate above 25°C PD 1300 10.4 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 8) RθJA 96 °C/W Thermal Reference, Junction−to−Lead 4 (Note 8) RψJL4 39.4 °C/W Total Device Dissipation (Note 9) TA = 25°C Derate above 25°C PD 1214 9.7 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 9) RθJA 103 °C/W Thermal Reference, Junction−to−Lead 4 (Note 9) RψJL4 40.2 °C/W Total Device Dissipation (Note 10) TA = 25°C Derate above 25°C PD 1389 11.1 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 10) RθJA 90 °C/W Thermal Reference, Junction−to−Lead 4 (Note 10) RψJL4 37.7 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 5. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 6. FR−4 @ 100 mm2, 2 oz. copper traces, still air. 7. FR−4 @ 300 mm2, 1 oz. copper traces, still air. 8. FR−4 @ 300 mm2, 2 oz. copper traces, still air. 9. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 10.FR−4 @ 500 mm2, 2 oz. copper traces, still air. NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical measurements and method of attachment. |
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