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Rev.1.2

SSF4414

30V N-Channel MOSFET

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1

1.9

3

V

Drain-Source On-State Resistance

31

40

mΩ

20

26

mΩ

Forward Transconductance

4

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

680

820

PF

Output Capacitance

100

PF

Reverse Transfer Capacitance

F=1.0MHz

75

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

4.5

6.5

nS

Turn-on Rise Time

4.2

6.3

nS

Turn-Off Delay Time

20

30

nS

Turn-Off Fall Time

4.9

7.5

nS

Total Gate Charge

13.8

17

nC

Gate-Source Charge

1.8

nC

Gate-Drain Charge

3.3

nC

Body Diode Reverse Recovery Time

17.2

21

nS

Body Diode Reverse Recovery Charge

8.6

10

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

0.76

1

V

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.