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MRF5812 Datasheet(PDF) 2 Page - Microsemi Corporation |
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MRF5812 Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 5 page MSC1319.PDF 10-25-99 MRF5812, R1, R2 ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC (off) Symbol Test Conditions Value Min. Typ. Max. Unit BVCEO Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) 15 - - Vdc BVCBO Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) 30 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 2.5 - - Vdc ICBO Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) - - 0.1 mA IEBO Collector Cutoff Current (VCE = 2.0 Vdc, VBE = 0 Vdc) - - 0.1 mA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) 50 200 DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit COB Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) - 1.4 2.0 pF Ftau Current-Gain Bandwidth Product (IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz) - 5.0 - GHz |
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