MRF4427R2 datasheet(2/5 Pages) MICROSEMI

Part #	MRF4427R2

Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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Manufacturer	MICROSEMI [Microsemi Corporation]

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2 / 5 page

MSC1313.PDF 10-25-99

MRF4427, R1, R2

ELECTRICAL SPECIFICATIONS (Tcase = 25

°C)

STATIC

(off)

Symbol

Test Conditions

Value

Min.

Typ.

Max.

Unit

BVCEO

Collector-Emitter Breakdown Voltage

(IC = 5.0 mAdc, IB = 0)

20

-

Vdc

BVCBO

Collector-Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

40

-

Vdc

BVEBO

Emitter-Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

2.0

-

Vdc

ICEO

Collector Cutoff Current

(VCE = 20 Vdc, VBE = 0 Vdc)

-

.02

mA

(on)

HFE

DC Current Gain

(IC = 100 mAdc, VCE = 5 Vdc)

(IC = 360 mAdc, VCE = 5 Vdc)

10

5.0

-

200

-

VCE(sat)

Collector-Emitter Saturation Voltage

(IC = 100 mAdc, IB = 20 mA)

60

-

mVdc

DYNAMIC

Symbol

Test Conditions

Value

Min.

Typ.

Max.

Unit

Ftau

Current-Gain Bandwidth Product

(IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz)

-

1.3

-

GHz

Cob

Output Capacitance

(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)

-

3.4

GHz

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